A1210/Core/Src/flash.c

/*
 * flash.c
 *
 *  Created on: 4 <EFBFBD><EFBFBD><EFBFBD>. 2021 <EFBFBD>.
 *      Author: Toporov
 */


#include "my.h"
#include "flash.h"
#include "stm32f4xx_hal_flash.h"
#include "stm32f4xx_hal_flash_ex.h"


static FLASH_EraseInitTypeDef FlashEraseInit;
__IO extern UserData_TypeDef currentData;

__IO uint16_t COUNT_EXT = 0;




void MX_FLASH_Init(void)
{
	__HAL_RCC_SYSCFG_CLK_ENABLE();

	FlashEraseInit.TypeErase = FLASH_TYPEERASE_SECTORS;
	FlashEraseInit.Banks = FLASH_BANK_1;
	FlashEraseInit.Sector = FLASH_SECTOR_7;
	FlashEraseInit.NbSectors = 1;
	FlashEraseInit.VoltageRange = FLASH_VOLTAGE_RANGE_3;

	rdPar();
}


void wrPar(void)
{
__IO uint32_t Address, lenpar, i;
__IO uint32_t *pData;
uint32_t SECTORError = 0;

	lenpar = sizeof(UserData_TypeDef);
	while(lenpar % 4) {
		lenpar++;
	}
	lenpar >>= 2;

	HAL_FLASH_Unlock();
	if(HAL_FLASHEx_Erase(&FlashEraseInit, &SECTORError) == HAL_OK)
	{
		Address = USERPAGE;
		pData = (uint32_t *) &currentData;
		for(i = 0; i < lenpar; i++)
		{
			HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, Address, *pData++);
			Address += 4;
		}
	}
	HAL_FLASH_Lock();
}



void rdPar(void)
{
uint8_t i;
uint32_t lenpar;
volatile bool rewrite = false;

	lenpar = sizeof(UserData_TypeDef);
	memcpy((void *) &currentData, (void *) USERPAGE, lenpar);

	//pardata.OWN = 0xffff;//todo
	if(currentData.OWN == 0xffff)
	{
		currentData.OWN = 1;     //<2F><><EFBFBD><EFBFBD><EFBFBD><EFBFBD> <20><><EFBFBD><EFBFBD><EFBFBD><EFBFBD>
		currentData.BAUD = 5;
		currentData.INFB = 1;

		currentData.IIN = CHARGE;
		currentData.IFV = Hp0_1;
		currentData.IFN = Lp100000;
		currentData.IKU = Ku1;
		currentData.IK0 = 1;
		currentData.IK1 = 0;
		currentData.IK2 = 0;
		currentData.IK3 = 0;
		currentData.IK4 = 0;

		currentData.IPZ =0;

		currentData.KCOND = 1.0f;
		currentData.SENS = 1.0f;

		rewrite = true;
	}

	////////////////////
	if(rewrite)
	{
		rewrite = false;
		wrPar();
	}
}